Method and apparatus for preventing catastrophic contact failure in ultra high temperature piezoresistive sensors and transducers
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United States of America Patent
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Jun 9, 2009
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Apr 26, 2006
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Abstract
A method to prevent the catastrophic failure of electrical contacts of silicon piezoresistive transducers located on a silicon wafer at temperatures above 600° C. comprising the steps of using a lead-free glass frit to surround the contacts and bonding the sensor wafer to a glass wafer employing a lead-free glass and utilizing a modified electrostatic bonding technique to join the silicon wafer to the lead-free glass wafer to form a high temperature SOI device.
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