METHOD FOR PREPARING P-TYPE POLYSILICON GATE STRUCTURE
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United States of America Patent
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Issued Date -
Nov 26, 2009
app pub date -
May 20, 2008
filing date -
May 20, 2008
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Abandoned
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Abstract
A method for preparing a P-type polysilicon gate structure comprises the steps of forming a gate oxide layer on a substrate, forming an N-type polysilicon layer on the gate oxide layer, performing a first implanting process to convert the N-type polysilicon layer into a P-type polysilicon layer, performing a second implanting process to implant P-type dopants into a portion of the P-type polysilicon layer near the interface between the gate oxide layer and the P-type polysilicon layer, and performing a thermal treating process at a predetermined temperature for a predetermined period to complete the P-type polysilicon gate structure.
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