Method of Manufacturing High Quality ZnO Monocrystal Film on Silicon(111) Substrate
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United States of America Patent
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Issued Date -
Nov 26, 2009
app pub date -
Apr 11, 2006
filing date -
Mar 20, 2006
priority date (Note) -
Abandoned
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Abstract
There is provided a method of manufacturing high quality ZnO manufacturing film on silicon (111) substrate, including the following steps: removing silicon oxide on the surface of silicon (111) substrate; depositing metal monocrystal film having 1-10 nm thickness, such as Mg, Ca, Sr, Cd etc, at low temperature; oxiding the metal film at low temperature to obstain metal oxide monocrystal layer; depositing ZnO buffer layer at low temperature; depositing ZnO epitaxial layer at high temperature. The ZnO film is suitable for fabrication of high performance of photoelectron device.
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