Method of forming a nanostructure

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United States of America Patent

PATENT NO 8668833
APP PUB NO 20090291311A1
SERIAL NO

12125030

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method of forming a discrete nanostructured element at one or more predetermined locations on a substrate is presented. The method includes forming a mask member over the substrate. A window is formed in the mask member at each of one or more locations at which it is required to form the nanostructured element thereby to expose a portion of a surface of the substrate. A portion of the substrate exposed by the window at the one or more locations is removed to form one or more recesses in the substrate. The method further includes forming a layer of a nanostructure medium over a surface of the recess and annealing the structure thereby to form the nanostructured element in each of the one or more recesses. The nanostructured element includes a portion of the nanostructure medium and has an external dimension along at least two substantially orthogonal directions of less than substantially 100 nm.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDHSINCHU 300-78

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chew, Han Guan Singapore, SG 3 19
Choi, Wee Kiong Singapore, SG 8 78
Liew, Tze Haw Singapore, SG 2 9
Zheng, Fei Singapore, SG 32 105

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