Method for passivating a substrate surface
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United States of America Patent
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Issued Date -
Nov 26, 2009
app pub date -
Jul 28, 2006
filing date -
Jul 29, 2005
priority date (Note) -
Abandoned
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Abstract
A method for passivating at least a part of a surface of a semiconductor substrate, wherein at least one layer comprising at least one SiOx layer is realized on said part of the substrate surface by: --placing the substrate (1) in a process chamber (5); --maintaining the pressure in the process chamber (5) at a relatively low value; --maintaining the substrate (1) at a specific substrate treatment temperature; --generating a plasma (P) by means of at least one plasma source (3) mounted on the process chamber (5) at a specific distance (L) from the substrate surface; --contacting at least a part of the plasma (P) generated by each source (3) with the said part of the substrate surface; and --supplying at least one precursor suitable for SiOx realization to the said part of the plasma (P); wherein at least the at least one layer realized on the substrate (1) in subjected to a temperature treatment in a gas environment.
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