METHOD FOR SIMULATENOUSLY PRODUCING MULTIPLE WAFERS DURING A SINGLE EPITAXIAL GROWTH RUN AND SEMICONDUCTOR STRUCTURE GROWN THEREBY
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United States of America Patent
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app pub date -
Nov 10, 2008
filing date -
Jul 6, 2001
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Abandoned
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Abstract
HVPE method for simultaneously fabricating multiple Group III nitride semiconductor structures during a single reactor run. A HVPE reactor includes a reactor tube, a growth zone, a heating element and a plurality of gas blocks. A substrate holder is capable of holding multiple substrates and can be a single or multi-level substrate holder. The gas delivery blocks are independently controllable. Gas flows from the delivery blocks are mixed to provide a substantially uniform gas environment within the growth zone. The substrate holder can be controlled, e.g., rotated and/or tilted, for uniform material growth. Multiple Group III nitride semiconductor structures can be grown on each substrate during a single fabrication run of the HVPE reactor. Growth on different substrates is substantially uniform and can be performed on larger area substrates, such as 3-12″ substrates.
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