HIGH PERFORMANCE OPTOELECTRONIC DEVICE
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United States of America Patent
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Issued Date -
Nov 19, 2009
app pub date -
Sep 1, 2008
filing date -
May 19, 2008
priority date (Note) -
Abandoned
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Abstract
An optoelectronic device is provided. The optoelectronic device includes a P-type semiconductor substrate, an N-type transparent amorphous oxide semiconductor (TAOS) layer located on a surface of the P-type semiconductor substrate, and a rear electrode on another surface of the P-type semiconductor substrate. The N-type TAOS layer constructs a portion of a P-N diode, and serves as a window layer and a front electrode layer.
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