Integrated Device
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United States of America Patent
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Issued Date -
Nov 12, 2009
app pub date -
Jun 2, 2006
filing date -
Jun 4, 2005
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
An integrated device including a sensor and the like formed on a γ-alumina layer epitaxially grown on a silicon substrate is provided at low cost. This integrated device includes: a silicon substrate; a first function area formed on a γ-alumina film epitaxially grown on a portion of the silicon substrate; a second function area formed on an area of the silicon substrate other than an area where the γ-alumina film is grown; and wiring means for connecting the first function area with the second function area.
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