SILICON STRUCTURE HAVING AN OPENING WHICH HAS A HIGH ASPECT RATIO, METHOD FOR MANUFACTURING THE SAME, SYSTEM FOR MANUFACTURING THE SAME, AND PROGRAM FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING ETCHING MASK FOR THE SILICON STRUCTURE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Nov 5, 2009
app pub date -
Sep 19, 2007
filing date -
Nov 22, 2006
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
Provided are a silicon structure having an opening which has a high aspect ratio and an etching mask for forming the silicon structure. A step of performing hole etching or trench etching of silicon so as to substantially expose a portion of at least a bottom surface of etched silicon and a step of forming a silicon oxide film by a CVD method on the silicon structure formed by the step of performing the hole etching or the trench etching are conducted. Thereafter, a step of exposing the formed silicon oxide film to a gas containing a hydrogen fluoride vapor is conducted. Further, the above-mentioned step of performing the hole etching or the trench etching is conducted again.
First Claim
Other Claims data not available