METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Nov 5, 2009
app pub date -
Apr 24, 2009
filing date -
May 1, 2008
priority date (Note) -
Abandoned
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Abstract
A thermal oxidation method capable of obtaining a high oxidation rate by generating a sufficient enhanced-rate oxidation phenomenon even in a low temperature region is provided. In addition, a thermal oxidation method capable of forming a silicon oxide film having a high reliability even when formed at a low temperature region. A basic concept herein is to form a silicon oxide film by thermal reaction by generating a large amount of oxygen radicals (O*) having a large reactivity without using plasma. More specifically, ozone (O.sub.3) and other active gas are reacted, so that ozone (O.sub.3) is decomposed highly efficiently even in a low temperature region, thereby generating a large amount of oxygen radicals (O*). For example, a compound gas containing a halogen element can be used as the active gas.
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