Bidirectional silicon-controlled rectifier
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United States of America Patent
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Issued Date -
Nov 5, 2009
app pub date -
Apr 30, 2008
filing date -
Apr 30, 2008
priority date (Note) -
Abandoned
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Abstract
The present invention discloses a bidirectional silicon-controlled rectifier, wherein the conventional field oxide layer, which separates an anode structure from a cathode structure, is replaced by a field oxide layer having floating gates, a virtual gate or a virtual active region. Thus, the present invention can reduce or escape from the bird's beak effect of a field oxide layer, which results in crystalline defects, a concentrated current and a higher magnetic field and then causes abnormal operation of a rectifier. Thereby, the present invention can also reduce signal loss.
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