Method and apparatus for cleaning of a CVD reactor
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United States of America Patent
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Issued Date -
Oct 29, 2009
app pub date -
Apr 24, 2008
filing date -
Apr 24, 2008
priority date (Note) -
Abandoned
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Abstract
The present invention provides a process and an apparatus for remote plasma cleaning of a process chamber of a chemical vapor deposition (CVD) reactor. The reactive species are generated in a remote plasma unit and are introduced into the process chamber through a plurality of inlet holes. The reactive species are free radicals such as oxygen radicals, fluorine radicals, and the like. These reactive species react with the unwanted residues in the process chamber and generate volatile products. The invention also provides a method for controlling the flow rate of the reactive species.
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