CMOS LINEAR IMAGE SENSOR OPERATING BY CHARGE TRANSFER

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United States of America Patent

APP PUB NO 20090268065A1
SERIAL NO

12440681

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Abstract

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The invention relates to image sensors in the form of a signal-integrating, travelling multi-line linear array for the synchronized readout of one and the same linear image successively by N lines of P photosensitive pixels and the pixel by pixel summation of the signals read out by the various lines. At the start of a photogenerated-charge integration time, the output voltage of a pixel of a previous line of rank i−1 is applied to the photodiode of the pixel of an intermediate line of rank i, the photodiode is isolated, the charges due to light are integrated therein and, finally, at the end of the integration time, the charges of the photodiode are transferred to a storage node of the pixel. A charge-voltage conversion circuit transforms the charges of the storage node into an output voltage of the pixel. Thus, before photogenerated charges are integrated in each pixel, a charge equivalent to an aggregate of charges originating from the previous pixel lines that have observed the same line of a scene is decanted into the photodiode.

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Patent Owner(s)

Patent OwnerAddress
E2V SEMICONDUCTORSFRENCH SHENGAIGELEIFU SAINT-EGREVE ISERE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fereyre, Pierre Voreppe , FR 16 63

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