Semiconductor device and method of manufacturing the semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20090267122A1
SERIAL NO

12385868

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Abstract

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A semiconductor device has a substrate, an insulator, an yttrium oxide film, a ferroelectric film (STN film), and an upper electrode.

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Patent Owner(s)

Patent OwnerAddress
FOUNDATION FOR ADVANCEMENT OF INTERNATIONAL SCIENCE586-9 USHIGAFUCHI AKATSUKA TSUKUBA-CITY IBARAKI PREFECTURE 305-0062
NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY1-1 KATAHIRA 2-CHOME AOBA-KU SENDAI-SHI MIYAGI 980-8577

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ohmi, Tadahiro Miyagi , JP 798 14083
Takahashi, Ichiro Miyagi , JP 64 2383

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