CLUB EXTENSION TO A T-GATE HIGH ELECTRON MOBILITY TRANSISTOR
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United States of America Patent
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Oct 27, 2009
Grant Date -
Oct 29, 2009
app pub date -
Apr 28, 2008
filing date -
Apr 28, 2008
priority date (Note) -
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status (Latency Note)
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Abstract
A method of fabricating a T-gate HEMT with a club extension comprising the steps of: providing a substrate; providing a bi-layer resist on the substrate; exposing an area of the bi-layer resist to electron beam lithography where the area corresponds to a T-gate opening; exposing an area of the bi-layer resist to electron beam lithography where the area corresponds to the shape of the club extension wherein the area corresponding to the club extension is approximately 1 micron to an ohmic source side of a T-gate and approximately 0.5 microns forward from a front of the T-gate; developing out the bi-layer resist in the exposed area that corresponds to the T-gate opening; developing out the bi-layer resist in the exposed area that corresponds to the club extension; and forming the T-gate and club extension through a metallization process.
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