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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
AUSTRIA WIRTSCHAFTSSERVICE GESELLSCHAFT MIT BESCHRANKTER HAFTUNG	1030 WIEN

International Classification(s)

• C07F:ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CO....

• 2009 Application Filing Year
• C07F Class
• 912 Applications Filed
• 378 Patents Issued To-Date
• 41.45 % Issued To-Date

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Hermetter, Albin	Graz, AT	13	60
# of filed Patents : 13 Total Citations : 60
Oskolkova, Olga	Graz, AT	4	8
# of filed Patents : 4 Total Citations : 8

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Patent Citation Ranking

• 1 Citation Count
• C07F Class

• 17.72 % this patent is cited more than
• 15 Age

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
August 10, 2010	US,7772402,B2   US7772402B2	GRANTED PATENT AS SECOND PUBLICATION
October 15, 2009	US,20090258422,A1   US20090258422A1	FIRST PUBLISHED PATENT APPLICATION

Full Text

US Patent Application No: 2017/0288,040

METHOD OF FORMING SIGE CHANNEL FORMATION REGION

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Abstract

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A method comprising: forming an SiGe layer on sidewalls of one or more fins of a semiconductor device by a non-selective deposition of amorphous SiGe, the fins being formed of Si or SiGe; depositing a silicon oxide layer over the SiGe layer; and forming an SiGe channel formation region within each fin by performing Ge enrichment to diffuse Ge atoms from the SiGe layer into the one or more fins.

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Description

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Claims

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