SILICIDE FORMATION UTILIZING NI-DOPED COBALT DEPOSITION SOURCE
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United States of America Patent
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Issued Date -
Oct 15, 2009
app pub date -
Apr 14, 2008
filing date -
Apr 14, 2008
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Abstract
A method of forming a layer of an electrically conductive metal-silicide material, comprises steps of: providing a Si-containing workpiece; forming a Ni-doped Co layer on a surface of the workpiece, as by sputter deposition utilizing a Ni-doped Co sputtering target; and reacting the Ni-doped Co layer and workpiece. Embodiments include performing a salicide process to form electrically conductive Ni-doped Co silicide functioning as electrically conductive contacts to the gate electrode and source and drain regions of a MOS transistor. Also disclosed are PVD sources, e.g., sputtering targets, comprising Ni-doped Co and utilized for forming the Ni-doped Co layer.
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