METHODS OF FORMING A SHALLOW BASE REGION OF A BIPOLAR TRANSISTOR
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Oct 8, 2009
app pub date -
Apr 2, 2008
filing date -
Apr 2, 2008
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
The disclosed subject matter provides a method of forming a bipolar transistor. The method includes depositing a first insulating layer over a first layer of material that is doped with a dopant of a first type. The first layer is formed over a substrate. The method also includes modifying a thickness of the first oxide layer based on a target dopant profile and implanting a dopant of the first type in the first layer. The dopant is implanted at an energy selected based on the modified thickness of the first insulating layer and the target dopant profile.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully