BIPOLAR TRANSISTOR AND METHOD OF MAKING SUCH A TRANSISTOR
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United States of America Patent
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Issued Date -
Oct 8, 2009
app pub date -
Dec 14, 2005
filing date -
Dec 15, 2004
priority date (Note) -
Abandoned
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Abstract
A bipolar transistor is formed on a heavily doped silicon substrate (1). An epitaxially grown collector (12) is formed on the substrate (1) and comprises silicon containing germanium at least at the top of the collector (12). An epitaxial base (13) is formed on the collector (12) to have the opposite polarity and also comprises silicon containing germanium at least at the bottom of the base (13). An emitter is formed at the top of the base (13) and comprises polysilicon doped to have the same polarity as the collector (12).
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