Method and structure of integrated rhodium contacts with copper interconnects
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United States of America Patent
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Nov 30, 2010
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Mar 24, 2008
filing date -
Mar 24, 2008
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Abstract
The present disclosure relates to a microelectronic structure and the manufacture of the microelectronic structure. Specifically, the disclosure relates to an interconnect barrier layer between a rhodium contact structure and a copper interconnect structure in a microelectronic structure. The microelectronic structure provides for low resistance in microelectronic devices.
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