GATE DRIVER FOR SWITCHING POWER MOSFET

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United States of America Patent

APP PUB NO 20090237126A1
SERIAL NO

12053637

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A gate driver for switching power MOSFET including a MOS pair, a first conduction path, and a second conduction path is disclosed. The MOS pair electrically coupling gate of the power MOSFET, for controlling turning on or turning off the power MOSFET. The first conduction path electrically couples to gate of the power MOSFET and the MOS pair, and has a constant resistance. The second conduction path electrically coupling to gate of the power MOSFET and the MOS pair, having variable resistance corresponding to gate voltage of the power MOSFET.

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Patent Owner(s)

Patent OwnerAddress
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INCNO 23 GONGYE E 4TH RD EAST DIST HSINCHU CITY 300

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chin-Yang Hsinchu City , TW 16 89

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