THIN FILM SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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May 21, 2009
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May 27, 2005
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Abstract
A thin film semiconductor device has: a substrate; a low-voltage thin film transistor formed on the substrate and having a first gate insulating film; and a high-voltage thin film transistor formed on the substrate and having a second gate insulating film whose thickness is larger than that of the first gate insulating film. A threshold voltage of the high-voltage thin film transistor of a first conductivity type is adjusted to be lower than a threshold voltage of the low-voltage thin film transistor of the same first conductivity type when the first gate insulating film and the second gate insulating film are assumed to be identical to each other.
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