METHOD AND APPARATUS FOR GROWTH OF HIGH PURITY 6H-SIC SINGLE CRYSTAL
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United States of America Patent
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Issued Date -
Sep 3, 2009
app pub date -
Feb 29, 2008
filing date -
Feb 29, 2008
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
The disclosure relates to a method and apparatus for growth of high-purity 6H SiC single crystal using a sputtering technique. In one embodiment, the disclosure relates to a method for depositing a high purity 6H-SiC single crystal film on a substrate, the method including: providing a silicon substrate having an etched surface; placing the substrate and an SiC source in a deposition chamber; achieving a first vacuum level in the deposition chamber; pressurizing the chamber with a gas; depositing the SiC film directly on the etched silicon substrate from a sputtering source by: heating the substrate to a temperature below silicon melting point, using a low energy plasma in the deposition chamber; and depositing a layer of hexagonal SiC film on the etched surface of the substrate.
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