METHOD FOR SYNTHESIZING ULTRAHIGH-PURITY SILICON CARBIDE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Sep 3, 2009
app pub date -
Dec 7, 2006
filing date -
Dec 7, 2005
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
Adsorbed gaseous species and elements in a carbon (C) powder and a graphite crucible are reduced by way of a vacuum and an elevated temperature sufficient to cause reduction. A wall and at least one end of an interior of the crucible is lined with C powder purified in the above manner. An Si+C mixture is formed with C powder purified in the above manner and Si powder or granules. The lined crucible is charged with the Si+C mixture. Adsorbed gaseous species and elements are reduced from the Si+C mixture and the crucible by way of a vacuum and an elevated temperature that is sufficient to cause reduction but which does not exceed the melting point of Si. Thereafter, by way of a vacuum and an elevated temperature, the Si+C mixture is caused to react and form polycrystalline SiC.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully