METHOD AND SYSTEM FOR MASK DESIGN FOR DOUBLE PATTERNING
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United States of America Patent
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Issued Date -
Aug 27, 2009
app pub date -
Feb 20, 2009
filing date -
Feb 22, 2008
priority date (Note) -
Abandoned
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Abstract
A method and system for setting up multiple patterning lithographic processing of a pattern in a single layer is disclosed. The multiple patterning lithographic processing comprises a first and second patterning step. In one aspect, a method includes, for at least one process condition, obtaining values for a metric expressing a splitting correlated process quality as function of design parameters of a pattern and/or split parameters for the multiple patterning lithographic processing. The method also includes evaluating the values of the metric and selecting based thereon design and split parameters considering the process condition. The method may further include deriving design and/or split guidelines for splitting patterns to be processed using multiple patterning lithographic processing based on the evaluation.
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