Defect Etching of Germanium
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United States of America Patent
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Issued Date -
Aug 27, 2009
app pub date -
Jan 29, 2009
filing date -
Jan 31, 2008
priority date (Note) -
Abandoned
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Abstract
, which makes it suitable to be used for revealing defects in a thin layer of germanium, i.e. in a layer of germanium with a thickness of between 20 nm and 10 μm, for example between 20 nm and 2 μm, between 20 nm and 1 μm or between 20 nm and 200 nm.
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