METHOD OF IMPROVING STABILITY OF DOMAIN POLARIZATION IN FERROELECTRIC THIN FILMS
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Aug 27, 2009
app pub date -
Feb 22, 2008
filing date -
Feb 22, 2008
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A memory device comprises a ferroelectric media comprising at least one ferroelectric film. The ferroelectric film has an as-grown spontaneous polarization of a first direction. A tip is position over the ferroelectric film and a first voltage is applied to the tip larger than a switching voltage of the ferroelectric film. One or both of the tip and the ferroelectric media is moved to form a first domain having a spontaneous polarization of opposite the first direction. The tip is then positioned over the first domain and a second voltage to the tip smaller than the first voltage to form a second domain smaller than the first domain and having a polarization of the first direction, the second domain defining the bit.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully