SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
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United States of America Patent
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Issued Date -
Aug 27, 2009
app pub date -
Feb 27, 2008
filing date -
Feb 27, 2008
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Abandoned
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Abstract
A semiconductor structure and method for forming the same are provided. The semiconductor structure comprises a semiconductor substrate, a plurality of top metallizations on the semiconductor substrate, a high density plasma layer filling gaps between the top metallizations and having a substantially planar upper surface overlying the top metallizations, and a passivation layer overlying the high density plasma layer. A metal bump can be formed overlying the top metallizations through the passivation layer and HDPCVD layer for subsequent bonding.
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