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United States of America Patent

APP PUB NO 20090212373A1
SERIAL NO

12393906

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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-type drain layer in a level shift circuit in the high-potential gate driver circuit, and an oxide film fills the trench to form a dielectric region in trench.

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Patent Owner(s)

Patent OwnerAddress
FUJI ELECTRIC SYSTEMS CO LTD11-2 OSAKI 1-CHOME SHINAGAWA-KU TOKYO 141-0032

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KARINO, Taichi Matsumoto City , JP 19 64
KITAMURA, Akio Matsumoto City , JP 59 751

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