Metal-Oxide-Semiconductor Transistor Device and Method for Making the Same

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United States of America Patent

SERIAL NO

12127799

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Abstract

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A metal-oxide-semiconductor transistor device includes a semiconductor substrate, an epitaxial layer formed on the semiconductor substrate, an oxide layer formed on the epitaxial layer, a gate structure formed on the oxide layer, and a shallow junction well formed on the two lateral sides of the gate structure including a source region and a heavy doping region. The gate structure includes a conductive layer having a gap on top of the sidewall of the conductive layer and a spacer formed on the gap.

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Patent Owner(s)

Patent OwnerAddress
AMIC TECHNOLOGY CORPORATIONNO 2 LI-HSIN 6TH ROAD SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU CITY

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Inventor Name Address # of filed Patents Total Citations
Hsu, Hsiu-Wen Hsinchu County , TW 47 59

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