SPUTTERING TARGET

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United States of America Patent

APP PUB NO 20090211902A1
SERIAL NO

12391487

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present invention provides a sputtering target in which an occurrence of target cracks can be inhibited. The sputtering target of the invention relates to a sputtering target produced by mixing and sintering a main powder containing In as a main component, which is obtained by pulverizing an ingot consisting of an intermetallic compound, and a sub-powder containing a different component composition from the above-mentioned main powder, wherein a total content of Si, Al and Fe which are unavoidable impurities is 300 ppm by mass or less. Further, the intermetallic compound contains In and at least one selected from Co and Ni.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL LTD )2-4 WAKINOHAMA-KAIGANDORI 2-CHOME CHUO-KU KOBE-SHI HYOGO 6518585 ?6518585
KOBELCO RESEARCH INSTITUTE INC1-5-1 WAKINOHAMA-KAIGAN-DORI CHUO-KU KOBE-SHI HYOGO 651-0073

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
FUJII, Hideo Hyogo , JP 48 544
Matsuzaki, Hitoshi Hyogo , JP 17 178

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