SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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United States of America Patent
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Issued Date -
Aug 20, 2009
app pub date -
Feb 19, 2009
filing date -
Feb 20, 2008
priority date (Note) -
Abandoned
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Abstract
A method for manufacturing a dual work function semiconductor device is disclosed. In one aspect, a method starts by forming a host dielectric layer over a first and second region of a substrate. A first dielectric capping layer is formed overlying the host dielectric layer on the first and second region and later selectively removed to expose an underlying layer on the first region. A Hf-based dielectric capping layer is formed overlying the underlying layer on the first region and the first dielectric capping layer on the second region. The Hf-based dielectric capping layer is selected to have a healing effect on the exposed surface of the underlying layer on the first region. A control electrode is formed overlaying the Hf-based dielectric capping layer on the first region and on the second region.
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