SEMICONDUCTOR LIGHT-EMITTING DEVICE
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United States of America Patent
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Issued Date -
Aug 13, 2009
app pub date -
Apr 30, 2007
filing date -
May 2, 2006
priority date (Note) -
Abandoned
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Abstract
An etching process includes forming a metal-fluoride layer at least as a part of an etching mask formed over a semiconductor layer at a temperature of 150° C. or higher; patterning the metal-fluoride layer; and etching the semiconductor layer using the patterned metal-fluoride layer as a mask. Using this etching method, even an etching-resistant semiconductor layer such as a Group III-V nitride semiconductor can be easily etched by a relatively simpler process.
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