HIGH POWER IMPULSE MAGNETRON SPUTTERING VAPOUR DEPOSITION
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United States of America Patent
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Issued Date -
Aug 13, 2009
app pub date -
Apr 24, 2007
filing date -
May 2, 2006
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Abandoned
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Abstract
Method and apparatus for physical vapour deposition (PVD) and in particular high power impulse magnetron sputtering (HIPIMS) deposition is described. The present apparatus and process provide for the creation of a weaker magnetic field in the region of the cathode which reduces the confinement of a significant part of the plasma near the target surface. By weakening the magnetic field in the region of the target, the deposition rate of materials at a substrate has been found to increase by a factor of 9 relative to that of conventional HIPIMS processes employing typical magnetic field strengths.
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