Method and device of ion source generation
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 30, 2010
Grant Date -
Aug 6, 2009
app pub date -
May 23, 2008
filing date -
Feb 5, 2008
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully