Method for Preparing Doped Polysilicon Conductor and Method for Preparing Trench Capacitor Structure Using the Same
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United States of America Patent
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Issued Date -
Jul 30, 2009
app pub date -
Apr 23, 2008
filing date -
Jan 29, 2008
priority date (Note) -
Abandoned
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Abstract
A method for preparing a doped polysilicon conductor according to this aspect of the present invention comprises the steps of (a) placing a substrate in a reaction chamber, (b) performing a deposition process to form a polysilicon layer on the substrate, (c) performing a grain growth process to form a plurality of polysilicon grains on the polysilicon layer, and (d) performing a dopant diffusion process to diffuse conductive dopants into the polysilicon layer via the polysilicon grains to form the doped polysilicon conductor.
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