METHOD OF FORMING TRENCH ISOLATION STRUCTURES AND SEMICONDUCTOR DEVICE PRODUCED THEREBY
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United States of America Patent
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N/A
Issued Date -
Jul 30, 2009
app pub date -
Jul 23, 2008
filing date -
Jan 30, 2008
priority date (Note) -
Abandoned
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Abstract
A method for forming a trench isolation structure and a semiconductor device are provided. The method comprises the following steps: forming a patterned mask on a semiconductor substrate; defining a trench with a predetermined depth D by using the patterned mask, wherein the trench has a bottom and a side wall; forming a liner layer covering the bottom and the side wall of the trench; substantially filling the trench with a flowable oxide from the bottom to a thickness d1 to form an oxide layer; forming a barrier layer with a thickness d′ to cover and completely seal the surface of the oxide layer, wherein d′
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