Organic transistor comprising a self-aligning gate electrode, and method for the production thereof
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jul 30, 2009
app pub date -
Jan 13, 2005
filing date -
Jan 14, 2004
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
An unpatterned semiconductor layer is applied to a substrate for the production of an organic transistor. An insulator is arranged on the semiconductor layer wherein at least the insulator layer is patterned, so that at least source and drain electrode layers can be formed subsequently. The source and drain electrode layers are formed after the patterning of at least the insulator layer to ensures that an overlap of both a gate electrode layer and the source and drain electrode layers is essentially avoided.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully