CONCENTRIC HOLLOW CATHODE MAGNETRON SPUTTER SOURCE
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United States of America Patent
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N/A
Issued Date -
Jul 30, 2009
app pub date -
Jan 16, 2009
filing date -
Jan 18, 2008
priority date (Note) -
Abandoned
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Abstract
A new sputter source is disclosed that allows for high rates of deposition at pressures one or two orders of magnitude lower than has previously been obtained. This results in denser films with reduced ion and electron damage to the substrate.
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