Non-volatile memory with single floating gate and method for operating the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jul 23, 2009
app pub date -
Jan 22, 2008
filing date -
Jan 22, 2008
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A non-volatile memory with single floating gate and the method for operating the same are proposed. The non-volatile memory is formed by embedding a FET structure in a semiconductor substrate. The FET comprises a single floating gate, a dielectric, and two ion-doped regions in the semiconductor at two sides of the dielectric. The memory cell of the proposed nonvolatile memory with single floating gate can perform many times of operations such as write, erase and read by means of a reverse bias.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully