APPARATUS FOR MANUFACTURING HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTAL INGOT AND METHOD USING THE SAME
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United States of America Patent
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Issued Date -
Jul 23, 2009
app pub date -
Jan 20, 2009
filing date -
Jan 21, 2008
priority date (Note) -
Abandoned
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Abstract
The present invention relates to an apparatus for manufacturing a high-quality semiconductor single crystal ingot and a method using the same. The apparatus of the present invention includes a quartz crucible, a heater installed around a side wall of the quartz crucible, a single crystal pulling means for pulling a single crystal from the semiconductor melt received in the quartz crucible, and a magnetic field applying means for forming a Maximum Gauss Plane (MGP) at a location of ML-1000 mm to ML-350 mm based on a Melt Level (ML) of the melt surface, and applying a strong magnetic field of 3000 to 5500 Gauss to an intersection between the MGP and the side wall of the quartz crucible and a weak magnetic field of 1500 to 3000 Gauss below a solid-liquid interface.
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