Graphite member for beam-line internal member of ion implantation apparatus
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United States of America Patent
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Mar 18, 2014
Grant Date -
Jul 16, 2009
app pub date -
Oct 12, 2006
filing date -
Oct 28, 2005
priority date (Note) -
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status (Latency Note)
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Abstract
The problem of the present invention is to provide, in high current-low energy type ion implantation apparatuses, a graphite member for a beam line inner member of an ion implantation apparatus, which graphite member can markedly reduce particles incorporated in a wafer surface. This problem can be solved by the graphite member of the present invention, which is a graphite member for a beam line inner member of an ion implantation apparatus, which member having a bulk density of not less than 1.80 Mg/m3 and an electric resistivity of not more than 9.5 μΩ·m. Preferably, the R value obtained by dividing D band intensity at 1370 cm−1 by G band intensity at 1570 cm−1 in the Raman spectrum of a spontaneous fracture surface of the graphite member is not more than 0.20.
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International Classification(s)
- H01J:ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- G21G:CONVERSION OF CHEMICAL ELEMENTS; RADIOACTIVE SOURC....
- C01B:NON-METALLIC ELEMENTS; COMPOUNDS THEREOF
- H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
- G21K:TECHNIQUES FOR HANDLING PARTICLES OR ELECTROMAGNET....
- A61N:ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY;....
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