Semiconductor device, method of manufacturing the same, and substrate for manufacturing the same
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United States of America Patent
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app pub date -
Mar 5, 2009
filing date -
Mar 31, 2005
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Abstract
A semiconductor device includes a substrate, a buffer layer that is formed with an aluminum nitride layer on the substrate and has a film thickness of 5 nm to 40 nm, an operating layer that is formed with a gallium nitride-based semiconductor on the buffer layer, and a control electrode that is formed on the operating layer.
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