Semiconductor integrated circuit

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United States of America Patent

PATENT NO 8040741
APP PUB NO 20090174465A1
SERIAL NO

12349686

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A semiconductor integrated circuit includes a boost circuit configured to boost a power supply voltage so as to generate first and second voltages, the second voltage being lower than the first voltage, a load circuit supplied with the first voltage, and a capacitor. The capacitor has first and second diffusion regions, a first insulating film formed on a channel region, a first electrode formed on the first insulating film, a second insulating film formed on the first electrode, and a second electrode formed on the second insulating film. The second voltage is applied to the first electrode. The first voltage is applied to the second electrode. The power supply voltage is applied to at least one of the first and second diffusion regions.

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Patent Owner(s)

Patent OwnerAddress
KIOXIA CORPORATION1-21 SHIBAURA 3-CHOME MINATO-KU TOKYO 108-0023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sato, Jumpei Kawasaki, JP 24 84

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