DUAL WORK FUNCTION DEVICE WITH STRESSOR LAYER AND METHOD FOR MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Jul 9, 2009
app pub date -
Nov 12, 2008
filing date -
Nov 13, 2007
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Abandoned
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Abstract
A method for manufacturing a dual work function semiconductor device is disclosed. In one aspect, the method relates to providing a substrate with a first and a second region. A gate dielectric is formed overlying the first and the second region. A metal gate layer is formed overlying the gate dielectric on the first and the second region. The metal gate layer has a first (as-deposited) work function that can be modified upon inducing strain thereon. The method further relates to selecting a first strain which induces a first pre-determined work function shift (ΔWF1) in the first (as-deposited) work function of the metal gate layer on the first region and selectively forming a first strained conductive layer overlying the metal gate layer on the first region, the first strained conductive layer exerting the selected first strain on the metal gate layer.
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