FIELD EFFECT TRANSISTOR WITH GATE HAVING VARYING SHEET RESISTANCE
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United States of America Patent
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Issued Date -
Jul 9, 2009
app pub date -
Jan 8, 2009
filing date -
Jan 8, 2008
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Abstract
A field effect transistor (FET) comprising a gate structure that includes at least one gate having a varying sheet resistance in a direction between a source contact and a drain contact. In an illustrative embodiment, the FET can be configured to operate as a radio frequency switch. In this case, the FET can provide improved performance with respect to both the off-state capacitances and radio frequency isolations over similar FETs implemented with typical gates.
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