Semiconductor lasers utilizing optimized n-side and p-side junctions
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United States of America Patent
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Mar 26, 2008
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Jul 28, 2004
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Abstract
A semiconductor laser and a method of forming the same are provided. The n-side and p-side junctions are independently optimized to improve carrier flow. The material for the n-side cladding layer is selected to yield a small conduction to valance band gap offset ratio while the material for the p-side cladding layer is selected to yield a large conduction to valance band gap offset ratio.
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