Mitigated Temperature Gradient-Distributed Bragg Reflector
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United States of America Patent
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Issued Date -
Jul 2, 2009
app pub date -
Dec 28, 2007
filing date -
Dec 28, 2007
priority date (Note) -
Abandoned
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Abstract
A semiconductor laser system comprising a gain region, a gain contact coupled to the gain region, and a distributed Bragg reflector (DBR) having a near side and a far side with respect to the gain region are provided. The DBR reflects a resonant frequency of light back into the gain region. The semiconductor laser system further comprises a heat conducting structure, wherein the heat-conducting structure is positioned to transfer heat in a direction from the near side to the far side of the DBR grating, and an outcoupler, positioned to outcouple the resonant frequency of light from the semiconductor laser system.
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