NON-VOLATILE MEMORY AND METHOD FOR FABRICATING THE SAME
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United States of America Patent
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Issued Date -
Jun 25, 2009
app pub date -
Mar 25, 2008
filing date -
Dec 24, 2007
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Abandoned
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Abstract
A non-volatile memory including a diode and a memory cell is described. The diode includes a doped region, a metal silicide layer, and a patterned doped semiconductor layer. The doped region of a first conductive type is formed in a substrate. The metal silicide layer is formed on the substrate. The patterned doped semiconductor layer of a second conductive type is formed on the metal silicide layer. The memory cell is formed on the substrate and coupled with the diode.
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