MODEL MODIFICATION METHOD FOR A SEMICONDUCTOR DEVICE

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United States of America Patent

APP PUB NO 20090157362A1
SERIAL NO

12336212

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Abstract

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A model modification method for a semiconductor device comprises the steps of: analyzing the electrical properties of a goal semiconductor device, in detail, to build a goal model that can be used to describe the behavior of the goal semiconductor device; and modifying the goal model according to the results of the WAT to obtain a modified model that can be used accurately to describe the behavior of produced semiconductor devices.

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AIROHA TECHNOLOGY CORP5 F NO 6-5 DUXING RD EAST DIST HSINCHU CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Hsin-Lan Hsinchu Science Park , TW 4 3
Chen, Sheng-Yow Hsinchu Science Park , TW 10 28
Wu, Yu-Lin Hsinchu Science Park , TW 5 49

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